Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-20T01:32:32.037Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

Sung-Yong Chung ,
Paul R. Berger ,
Z-Q. Fang  and
Phillip E. Thompson
Sung-Yong Chung
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210
Paul R. Berger
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210 Department of Physics, The Ohio State University, Columbus, OH 43210
Z-Q. Fang
Affiliation:
University Research Center, Wright State University, Dayton, OH 45435, USA
Phillip E. Thompson
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5347, USA
Get access

Abstract

Deep-level transient spectroscopy (DLTS) measurements were performed on Si:Sb and Si:B n+-p step junction diodes grown by LT-MBE at various growth temperatures. The trap density dependence on growth temperature decreases with increasing temperature. However, segregation and diffusion increase with increasing temperature. Electron traps, E1 (0.42–0.45eV) and E2 (0.257eV), and hole traps, H1 (0.38–0.41eV), were found in B-doped layer grown at 370°C, 420°C, 500°C, and 600°C. These traps have been characterized by their capture cross-section, activation energy level, and trap density. The origins of the dominating electron traps are hypothesized as the association with pure divacancy defects. E1 level can be assigned for singly negatively charged divacancy V(0/-) + α and E2 level for doubly negatively charged divacancy V(-2/-).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N6.9
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rommel, S. L., Dillon, T. E., Dashiell, M. W., Feng, H., Kolodzey, J., Berger, P. R., Thompson, P. E., Hobart, K. D., Lake, R., Seabaugh, A. C., Klimeck, Gerhard, and Blanks, D. K., Appl. Phys. Lett., 73, 2191–2193 (1998).Google Scholar
2. Lang, D. V., J. Appl. Phys., 45, 3023–3033 (1974).Google Scholar
3. Hobart, K. D., Godbey, D. J., Twigg, M. E., Fatemi, M., Thompson, P. E., and Simons, D. S., Surface Sci., 334, 29–35 (1995).Google Scholar
4. Monakhov, E. V., Kuznetsov, A.Yu., and Svensson, B. G., Phys. Rev. B, 63, 245322 (2001).Google Scholar
5. Budtz-Jørgensen, C. V., Kringhøj, P., and Nylandsted Larsen, A., Phys. Rev. B, 58, 1110–1113 (1998).Google Scholar
6. Kringhøj, P., and Nylandsted Larsen, A., Phys. Rev. B, 52, 16333∼16336 (1995).Google Scholar
7. Gossmann, H.-J., Rafferty, C. S., Underwald, F. C., Boone, T., Mogi, T. K., Thompson, M. O., and Luftman, H. S., Appl. Phys. Lett., 67, 1558–1560 (1995).Google Scholar
8. Chen, W. M., Buyanova, I. A., Ni, W. X., Hanson, G. V. and Monemar, B., Phys. Rev. Lett., 77, 4214–4217 (1996).Google Scholar
9. Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C., and Coleman, P. G., J. Appl. Phys., 89, 76–79 (2001).Google Scholar
10. Thor, E., Muhlberger, M., Palmetshofer, L., and Schaffler, F., J. Appl. Phys., 90, 2252–2256 (2001).Google Scholar
11. Svensson, B. G., Mohadjeri, B., Hallén, A., Svensson, J. H., and Corbett, J. W. Phys. Rev. B, 43, 2292–2298 (1991).Google Scholar
12. Svensson, B. G., Jagadish, C., Hallen, A., and Lalita, J., Phys. Rev. B, 55, 498–507 (1997).Google Scholar
13. Jaros, M., Deep Levels in Semiconductors, (Hilger, Bristol, 1982) p. 253 and references therein.Google Scholar
14. Sugino, O. and Oshiyama, A., Phys. Rev. B., 42, 11869–11874 (1990).Google Scholar
15. Anderson, F. G., J. Res. Phys. Chem. and Chem. Phys., 200, 177–185 (1997).Google Scholar
16. Thompson, P. E., Godbey, D., Hobart, K., Glaser, E., Kennedy, T., Twigg, M. and Simons, D., Jpn. J. Appl. Phys., 33, 2317–2321 (1994).Google Scholar
17. Chen, J. W. and Milnes, A. G., Ann. Rev. Master. Sci. 10, 157–228 (1980).Google Scholar
18. Schroder, D. K., Semiconductor Material and Device Characterization 2nd ed., (Wiley, New York, 1990).Google Scholar