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Growth Temperature Dependence of Size Distribution of Selfassembled Inas Quantum Dots on Gaas(001): From Diffusion- to Strain-Limited Growth

  • J. Yuan (a1), G. D. Lian (a1), Z. Y. Li (a1), D. A. Ritchie (a1), R. M. Thompson (a1), A. J. Shields (a2), I. Farrer (a1) and L. M. Brown (a1)...

Abstract

We have investigated the molecular beam epitaxy (MBE) growth of buried InAs quantum dots on GaAs (001) surface, as a function of deposition temperature, by transmission electron microscopy (TEM) and photoluminescence (PL). We found that the dot growth at low temperature is controlled by diffusion-limited aggregation. As the growth temperature increases, this growth mode is modified by misfit strain, resulting in a narrowing of the size distribution. However, we did not find any evidence for a thermodynamically optimized size. In addition, we found that the optical properties of the quantum dots does not correlate directly with the geometric size of the quantum dots, indicating a complex internal structure for quantum dots grown at high growth temperature.

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Present address: Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington KY, 40506-00046, U.S.A.

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