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Growth, Structure, and Properties of Uniformly a-Axis Oriented Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Si(100) Substrates

Published online by Cambridge University Press:  11 February 2011

D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle (Saale), Germany
H. N. Lee
Affiliation:
Now with Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
N. D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle (Saale), Germany
U. Gösele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, D-06120 Halle (Saale), Germany
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Abstract

Uniformly a-axis-oriented, epitaxially twinned Bi3.25La0.75Ti3O12 (BLT) thin films having the major spontaneous polarization entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates covered with very thin SrRuO3 bottom electrodes. Using SrRuO3 bottom electrodes of a specific low thickness in combination with a relatively high growth rate and a high oxygen pressure, the volume fraction of the BLT (100) orientation, which is competing with the BLT (118) orientation, was increased up to 99%. In this way the growth of fully a-axis-oriented BLT epitaxial films was achieved, attaining a remanent polarization of 32 mC/cm2. Initial fatigue experiments indicated hardly any fatigue after 109 switching cycles.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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