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Growth Processes of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

John Robertson
John Robertson*
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK.jr@eng.cam.ac.uk
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Abstract

The surface and subsurface processes occurring during the growth of a-Si:H are analysed to understand why dangling bond defects and weak Si-Si bonds form. We argue that hydrogen elimination to form the Si-Si network is the rate limiting process at low temperature, and this leads to the creation of weak Si-Si bonds. Dangling bonds form subsequently from weak bonds by a defect pool type process. Plasma processes, such as ion bombardment, which dehydrogenate the surface layers, can reduce the weak bond density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A1.4
Copyright
Copyright © Materials Research Society 1999

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