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Growth, Patterning and Microelectronic Applications of Epitaxial Cobaltdisilicide
Published online by Cambridge University Press: 10 February 2011
Abstract
We report on the epitaxial growth of CoSi2 on silicon using ion beam synthesis and molecular beam allotaxy. The latter process uses molecular beam epitaxy to grow a silicide precipitate distribution embedded in single crystalline silicon and thermal annealing to form the epitaxial layer. Both, ion beam synthesis and molecular beam allotaxy, are capable to grow epitaxial buried and surface CoSi2 layers on Si(100) and Si(111) of high quality.
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- Copyright © Materials Research Society 1998
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