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Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method

  • T. Kusunoki (a1), K. Nakajima (a1), H. Shoji (a1) and T. Suzuki (a1)

Abstract

We have developed a Multi-component Zone Melting method to grow a ternary compound crystal which has a uniform composition. A 4.5 mm long InGaAs bulk crystal with a uniform InAs composition of 0.3 has been successfully grown using this method. InGaAlAs/InGaAs strained quantum well lasers were fabricated on an In0. 2Ga0.8As substrate which was grown by this method. A minimum threshold current density of 280 A/cm2 was achieved.

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