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Growth of Ultra-High Density 3C-SiC Nanowires via Single Source CVD

Published online by Cambridge University Press:  29 July 2011

Kasif Teker  and
Joseph A. Oxenham
Kasif Teker
Affiliation:
Department of Physics and Engineering, Frostburg State University, 101 Braddock Road, Frostburg, MD 21532, U.S.A.
Joseph A. Oxenham
Affiliation:
Department of Physics and Engineering, Frostburg State University, 101 Braddock Road, Frostburg, MD 21532, U.S.A.
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Abstract

Silicon carbide (SiC) nanostructures attract interest due to their applications in optoelectronic devices, sensors, and high-power/high temperature electronics. The synthesis of SiC nanowires by chemical vapor deposition using hexamethyldisilane (HMDS) as a source material on SiO2/Si substrate has been investigated. Various catalyst materials, including iron (film and nanoparticles), nickel (film and nanoparticles), and cobalt nanoparticles have been used. The growth runs have been carried out at temperatures between 900 and 1100°C under H2 as carrier gas. 3C-SiC nanowires have successfully been grown at even lower temperatures despite the lower efficiency of source decomposition at low temperatures. The SiC nanowire diameters are in the range of 8 nm to 60 nm, as determined by transmission electron microscopy (TEM). In general, the efficiency of nanowire growth has increased with temperature except the growth on Ni film, which has occasionally resulted in SiC flowers. Higher nanowire density at high temperatures can be attributed to more efficient decomposition of the source at higher temperatures. Further, optical properties of the nanowires have been studied by Fourier transform infrared spectroscopy (FTIR). The fabricated nanowires have also been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD).

Keywords

chemical vapor deposition (CVD) (deposition)nanostructureelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee03-06
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Casady, J.B. and Johnson, R.W., Solid State Electron. 39, 1409 (1996).Google Scholar
2. Wong, E.W., Meng, G.W., and Lieber, C.M., Science 277, 1971 (1997).Google Scholar
3. Liang, C.H., Meng, G.W., Zhang, L.D., Wu, Y.C., and Cui, Z., Chem. Phys. Lett. 329, 323 (2000).Google Scholar
4. Shenai, K., Scott, R.S., and Baliga, B.J., IEEE Trans. Electron Devices 36, 1811 (1989).Google Scholar
5. Kim, D.W., Choi, Y.J., Choi, K.J., Park, J.G., Pimenov, S.M., Frolov, V.D., Abanshin, N.P., Gorfinkel, B.I., Rossukanyi, N.M., and Rukovishnikov, A.I., Nanotechnol. 19, 225706 (2008).Google Scholar
6. Ali, M., Cimalla, V., Lebecev, V., Stauden, T., Ecke, G., Tilak, V., Sandvik, P., and Ambacher, O., Sens. Actuator B 122, 182 (2007).Google Scholar
7. Li, G., Burggraf, W.L., Shoemaker, R.J., Eastwood, D., and Stiegman, E.A., Appl. Phys. Lett. 76, 3373 (2000).Google Scholar
8. Fu, Q.G., Li, H.J., Shi, X.H., Li, K.Z., Wei, J., and Hu, Z.B., Mater. Chem. Phys. 100, 108 (2006).Google Scholar
9. Panda, S.K., Sengupta, J., and Jacob, C., J. Nanosci. Nanotechnol. 10, 3046 (2010).Google Scholar
10. Meng, G.W., Zhang, L.D., Mo, C.M., Zhang, S.Y., Qin, Y., Feng, S.P., and Li, H.J., J. Mater. Res. 13, 2533 (1998).Google Scholar
11. Kang, B.C., Lee, S.B., and Boo, J.H., Thin Solid Films 215, 464 (2004).Google Scholar
12. Baek, Y., Ryu, Y.H., and Yong, K., Mater. Sci. Eng. C 26, 805 (2006).Google Scholar
13. Meng, G.W., Zhang, L.D., Qin, Y., Mo, C.M., and Philipp, F., Nanostruct. Mater. 12, 1003 (1999).Google Scholar