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Growth of TiO2 Thin Films by Pulsed Laser Evaporation

  • Ming Y. Chen (a1) and P. Terrence Murray (a2)

Abstract

Thin films of TiO2 have been grown by pulsed laser evaporation. The films were analyzed by in-situ Auger and x-ray photoelectron spectroscopy as well as by ex-situ grazing incidence xray diffraction. Films grown at room temperature and at a pressure of 5×10minus; 3 Torr were oxygen deficient. Films grown at 500°C and higher were found to be stoichiometric TiO2.The effect of substrate temperature and evaporation conditions on film properties will be discussed.

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Growth of TiO2 Thin Films by Pulsed Laser Evaporation

  • Ming Y. Chen (a1) and P. Terrence Murray (a2)

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