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Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

  • P. T. Murray (a1), M. S. Donley (a2) and N. T. McDevitt (a2)

Abstract

The feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

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Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

  • P. T. Murray (a1), M. S. Donley (a2) and N. T. McDevitt (a2)

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