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Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

  • Sung Chul Kim (a1), Kyu Chang Park (a1), Sung Ki Kim (a1), Jung Mok Jun (a1) and Jin Jang (a1)...

Abstract

We studied the growth of polycrystalline silicon by using remote plasma chemical vapour deposition technique. The effects of RF power and the substrate temperature on the structural properties have been investigated. With increasing the RF power, the crystalline volume fraction and the grain size increase up to 100W, but decrease for the further increase in power level. We obtained the poly-Si with the crystalline volume fraction of about 74 at.% at the substrate temperature of 330°C.

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Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD

  • Sung Chul Kim (a1), Kyu Chang Park (a1), Sung Ki Kim (a1), Jung Mok Jun (a1) and Jin Jang (a1)...

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