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Growth of Polycrystalline Silicon Films at Low Temperature by Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Y. Hatanaka ,
A. H. Jayatissa ,
K. Ishikawa  and
Y. Nakanishi
Y. Hatanaka
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan
A. H. Jayatissa
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan
K. Ishikawa
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan
Y. Nakanishi
Affiliation:
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan
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Abstract

Polycrystalline silicon (poly-Si) films are of great interest in the field of TFT fabrication for active matrix liquid crystal display(AM-LCD) applications. Low temperature depositions below 500 °C are necessary for using a glass substrate for the application to large area devices such as display devices. We investigated poly-Si growth at low temperature by plasma enhanced chemical vapor deposition (PECVD). Cathode deposition is used in which substrates are mounted on the powered electrode and a mesh electrode is attached on the cathode for protecting the growing surface from ion impacts. It is found that poly-Si films can be deposited in the wide range of SiH4 concentration even at 100%, and a high deposition rate of 35nm/min has been realized. This investigation gives highly promising results for poly-Si growth technology at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 345
Copyright
Copyright © Materials Research Society 1996

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