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Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Rob Armitage ,
Masahiro Horita ,
Jun Suda  and
Tsunenobu Kimoto
Rob Armitage
Affiliation:
rob@semicon.kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering
Masahiro Horita
Affiliation:
horita@semicon.kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering
Jun Suda
Affiliation:
suda@kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Japan
Tsunenobu Kimoto
Affiliation:
kimoto@kuee.kyoto-u.ac.jp, Kyoto University, Department of Electronic Science and Engineering, Japan
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Abstract

AlN and AlGaN have been grown on 4H-SiC (1-100) substrates by rf-plasma molecular beam epitaxy. AlN assumes a metastable 4H structure to match the in-plane stacking arrangement of the substrate. Initial 2D nucleation of 4H-AlN is revealed by reflection high-energy electron diffraction. The epitaxial quality is evidenced by narrow x-ray diffraction ω-scan line widths less than 100 arcsec for symmetric and asymmetric reflections. Structural characterization results for AlGaN/AlN multiple quantum wells are also presented.

Keywords

molecular beam epitaxy (MBE)structuralnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF28-03
Copyright
Copyright © Materials Research Society 2006

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References

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