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Growth of Micro-Crystalline SI:H and (SI,GE):H on Polyimide Substrates using ECR Deposition Techniques

Published online by Cambridge University Press:  15 February 2011

Karl Erickson ,
Vikram L. Dalal  and
George Chumanov
Karl Erickson
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA
Vikram L. Dalal
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA
George Chumanov
Affiliation:
Dept. of Chemistry, Iowa State University, Ames, Iowa 50011, USA
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Abstract

We report on the growth of good quality micro-crystalline Si:H and (Si,Ge):H films on polyimide substrates using a remote plasma ECR deposition technique. We find that under conditions that lead to significant ion bombardment of the substrate, the films are microcrystalline even at relatively low deposition temperatures of about 250 C. A critical factor in inducing micro-crystallinity is the presence of a metal coating layer on polyimide. In the absence of such a coating, the films are amorphous, probably because the uncoated polyimide substrate charges up and prevents any further ion bombardment. The quality of the films was measured using both Raman spectroscopy and by studying the activation energy and low-energy absorption coefficient of the films. The sub gap absorption coefficient was found to follow the crystalline Si absorption curve quite well. The addition of germane to the gas phase shifted the absorption curve to smaller energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 409
Copyright
Copyright © Materials Research Society 1997

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References

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