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Growth of Metal Alkoxide Solution Derived Epitaxial LiNbO3 Thin Films for Optical Waveguides

Published online by Cambridge University Press:  10 February 2011

Keiichi Nashimoto ,
Shigetoshi Nakamura  and
Hiroaki Moriyama
Keiichi Nashimoto
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
Shigetoshi Nakamura
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
Hiroaki Moriyama
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
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Abstract

Solid phase epitaxial growth of LiNbO3 thin films, using a methoxyethoxide solution process, has been examined for optical waveguide applications. The growth variables such as crystallization temperature, crystallization time, and film thickness have been found to be critical factors in the quality of LiNbO3 thin films. High quality epitaxial LiNbO3 films were grown on sapphire (001) substrates using optimized buffer layers. The LiNbO3 showed single orientation, rocking curve full width at half maximum less than 0.04°, and rms roughness of 2.3 nm, in addition to refractive index of 2.24 and optical propagation loss of 3.0 dB/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 395
Copyright
Copyright © Materials Research Society 1996

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