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The Growth of High Quality GaAs Epilayers on Stripe Patterned InP Substrates With a Transferred GaAs Fused Layer

  • Sung Min Hwang (a1), Young Ju Park (a1), Eun Kyu Kim (a1) and In-Hoon Choi (a2)

Abstract

Both the wafer fusion and the heteroepitaxy technology were used successfully to obtain high quality GaAs layer on the InP substrate where the lattice mismatch was 3.7 %. The enhancement of the lateral growth rate was a crucial factor for the formation of high quality QWR in the patterned fusion layer. This technique can provide a way of overcoming the limitation of heteroepitaxy caused by misfit problems and its subsequent quality degradation. It is expected that the overgrowth technique on the patterned fusion layer can be applicable to the photonic device fabrication on the other substrate such as Si.

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The Growth of High Quality GaAs Epilayers on Stripe Patterned InP Substrates With a Transferred GaAs Fused Layer

  • Sung Min Hwang (a1), Young Ju Park (a1), Eun Kyu Kim (a1) and In-Hoon Choi (a2)

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