Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T07:39:14.400Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Hexagonal Gallium Nitride Films On The (111) Surfaces of Silicon with Zinc Oxide Buffer Layers

Published online by Cambridge University Press:  10 February 2011

Y. Kim ,
C. G. Kim ,
K-W. Lee ,
K-S. Yu ,
J. T. Park  and
Y. Kim
Y. Kim
Affiliation:
Inorganic Materials Division, Korea Research Institute of Chemical Technology, Taejon 305–600, KOREA, yunsukim@pado.krict.re.kr
C. G. Kim
Affiliation:
Inorganic Materials Division, Korea Research Institute of Chemical Technology, Taejon 305–600, KOREA, yunsukim@pado.krict.re.kr
K-W. Lee
Affiliation:
Inorganic Materials Division, Korea Research Institute of Chemical Technology, Taejon 305–600, KOREA, yunsukim@pado.krict.re.kr
K-S. Yu
Affiliation:
Inorganic Materials Division, Korea Research Institute of Chemical Technology, Taejon 305–600, KOREA, yunsukim@pado.krict.re.kr
J. T. Park
Affiliation:
Department of Chemistry, Korea Advanced Institute of Science and Technology, Taejon 305–701, KOREA
Y. Kim
Affiliation:
Department of Chemistry, Korea Advanced Institute of Science and Technology, Taejon 305–701, KOREA
Get access

Abstract

The growth of gallium nitride films on sapphire substrates has not been straightforward because of the large lattice mismatch between gallium nitride and sapphire. Zinc oxide is structurally the closest material to gallium nitride and therefore is finding use as the substrate for gallium nitride. Single crystal wafers of zinc oxide are hard to obtain and very expensive. However, a thin layer of zinc oxide on a suitable substrate might solve this problem. In this work, highly c-axis oriented zinc oxide buffer layers were grown on Si(lll) substrates at temperatures 410–540 °C by chemical vapor deposition of bis(2,2,6,6-tetramethyl–3,5-heptanedionato)zinc, Zn(tmhd)2, and the hexagonal GaN films were subsequently deposited on them at 500 °C using the single precursor tris(diethyl -μ-amido-gallium), [(C2H5)2 GaNH2]3. The compound Zn(tmhd)2 was found to require oxygen for the deposition of zinc oxide. In the case of gallium nitride, low pressure chemical vapor deposition of tris(diethyl-μ-amido-gallium) worked reasonably well with or without a carrier gas. The buffer layers and the GaN films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and reflection high energy elctron diffraction (RHEED).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 367
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Mukai, T., and Senoh, M., Jpn. J. Appl. Phys. 30, L1998 (1991).Google Scholar
2. Kim, J. G., Frenkel, A. C., Liu, H., and Park, R. M., Appl. Phys. Lett. 65, 91 (1994).Google Scholar
3. Elwell, D. and Elwell, M. M., Prog. Crystal Growth Charact. 17, 53 (1988).Google Scholar
4. Detchprohm, T., Amano, H., Hiramatsu, K., and Akasaki, I., J. Crystal Growth 128, 384 (1993).Google Scholar
5. Manasevit, H. M., Erdmann, F. M., and Simpson, W. I., J. Electrochem. Soc. 118, 1864 (1971).Google Scholar
6. Hammond, G. S., Nonhebel, D. C., and Wu, C.-H. S., Inorg. Chem. 2, 73 (1973).Google Scholar
7. Almond, M. J., Drew, M. G. B., Jenkins, C. E., and Rice, D. A., J. Chem. Soc. Dalton Trans. 5 (1992).Google Scholar
8. Oda, S., Tokunaga, H., Kitajima, N., Hanna, J.-i., Shimizu, I., and Kokado, H., Jpn. J. Appl. Phys. 24, 1607 (1985).Google Scholar
9. Wagner, C. D., Riggs, W. M., Davis, L. E., and Moulder, J. F., “ Handbook of X-ray Photoelectron Spectroscopy,” Muilenberg, G. E. (editor); Perkin-Elmer Corporation, Physical Electronics Division; Eden Prairie (1979).Google Scholar