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Growth of Halide Scintillators with a Modified Heat Exchange Method

Published online by Cambridge University Press:  21 February 2011

T.G. Berthold  and
B.C. Grabmaier
T.G. Berthold
Affiliation:
Siemens AG, Corporate Research and Development, D-81739 München
B.C. Grabmaier
Affiliation:
Siemens AG, Corporate Research and Development, D-81739 München
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Abstract

To test the potential of the heat exchange method for growing scintillator crystals, ingots of mono-, bi- and trivalent halides were prepared. Except for monovalent halides, the removal of oxygen compounds is indispensable. In the case of CaF2 and BaF2, the purification by reaction with NH4F and a superheating of the melt could be included in the crystal growth process. Clear, monocrystalline ingots of these substances were grown in 4f-heated glassy carbon crucibles without seed crystals. Oxygen-free starting material had to be prepared for the growth of inclusion free CeF3 crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 348 , 1994 , 513
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Stober, F.: Z. Krist. 61 (1925) 299. 314 Google Scholar
[2] Schmid, F., Viechnicki, D.J.: Solid State Tech. (1973) 45–48 Google Scholar
[3] Biderman, S., Horowitz, A., Einav, Y., Amar, G. Ben, Gazit, D., Stem, A., Weiss, M.: SPIE 1535 (1991) 27–34 Google Scholar
[4] Lamsen, I., Holmes, L.M.: J. Phys. C 7 (1974) 3765–3769 Google Scholar
[5] Reed, T.B., Fahey, R., Moulton, R.: J. Cryst. Growth 42 (1977) 369–373 10.1016/0022-0248(77)90248-2Google Scholar
[6] Horowitz, A., Biderman, S., Amar, G. Ben, Laor, U., Weiss, M., Stern, A.: J. Crystal Growth 85 (1987) 215–222 10.1016/0022-0248(87)90225-9Google Scholar
[7] Anderson, D.F.: IEEE Trans. Nucl. Sci. 36,1 (1989) 137–140 W.W. Moses, S.E. Derenzo: IEEE Trans. Nucl. Sci. 36,1 (1989) 173 - 17610.1109/23.34420Google Scholar
[8] Jones, D.A., Shand, W.A.: J. Crystal Growth 2 (1968) 361–368 10.1016/0022-0248(68)90029-8Google Scholar
[9] Pedrini, C., Moine, B., Buttet, D., Belsky, A.N., Mikhailin, V.V., Vasil'ev, A.N., Zinin, E.I.: Chem. Phys. Lett. 206 (1993) 470–474 10.1016/0009-2614(93)80170-TGoogle Scholar
[10] Weber, M.J.: Proceedings of the Cristal 2000 (1992) 99–124 Google Scholar