Skip to main content Accessibility help
×
Home

Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces

  • R. Hull (a1), J. C. Bean (a1), L. Peticolas (a1), Y. H. Xie (a1) and Y. F. Hsieh (a1)...

Abstract

We compare and contrast GexSi1−x alloys grown on Si (100), (110) and (111) surfaces. The geometry of interfacial misfit dislocations are observed to be different on these three surfaces, as the intersections of available ♣111} glide planes are of different symmetries for the different interfaces. In addition, angular factors resolving the applied and line tension stresses onto misfit dislocations vary over the different surfaces, producing different effective stresses for identical layer thicknesses, compositions and microstructures. Finally, markedly different dislocation microstructures are observed on the different surfaces, as geometrical considerations show that partial dislocations may separately propagate on the (110) and (111) surfaces, in contrast to the (100) surface.

Copyright

References

Hide All
1. Dodson, B W and Tsao, J Y 1987, Appl. Phys. Lett. 51, 1325
2. Eaglesham, D J, Kvam, E P, Maher, D M, Humphreys, C J and Bean, J C 1989, Phil. Mag. A59, 1059
3. Houghton, D C 1990, Appl. Phys. Lett. 57, 1434 and 2124
4. Hull, R, Bean, J C, Werder, D J and Leibenguth, R E 1988, Appl. Phys. Lett. 52, 1605
5. Hull, R and Bean, J C 1989a, J. Vac. Sci. A7, 2580
6. Hull, R and Bean, J C 1989b, Appl. Phys. Lett 54, 925
7. Hull, R, Bean, J C, Bahnck, D, Peticolas, L J, Short, K T and Unterwald, F C 1991, J. Appl. Phys., in press.
8. Tuppen, C G and Gibbings, C J 1990, J. Appl. Phys. 68, 1526
9. Hirth, J P and Lothe, J 1968, Theory of Dislocations' (McGraw-Hill, New York)
10. Matthews, J. W. (1975), J. Vac. Sci Tech. 12, 126 and references therein
11. Alexander, H and Haasen, P 1968, Solid State Physics 22, 27
12. George, A and Rabier, J 1987, Revue Phys. Appl. 22, 941
13. Imai, M and Stimino, K 1983, Phil. Mag. A47, 599
14. Patel, J R and Chaudhuri, A R 1966, Phys. Rev. 143, 601
15. Bean, J C, Feldman, L C, Fiory, A T, Nakahara, S and Robinson, I K 1984, J. Vac. Sci. Technol. A2, 436
16. Maree, P M J, Barbour, J C, van der Veen, J F, Kavanagh, K L, Bulle-Lieuwma, C W T and Viegers, M P A 1987, J. Appl. Phys. 62, 4413.
17. Viegers, M P A, Bulle-Lieuwma, C W T, Zalm, P C and Maree, P M J 1985, Proc. Mat. Res. Sec. 37, 331
18. Thompson, N 1953, Proc. Phys. Soc. 66B, 481
19. Wegscheider, W, Eberl, K, Menczigar, U and Abstreiter, G 1990, Appl. Phys. Lett. 57, 875
20. Hirsch, P B, Howie, A, Nicholson, R B, Pashley, D W and Whelan, M J, ‘Electron Microscopy of Thin Crystals’ (Robert E. Krieger, Malabar, FL, 1977)
21. Heggie, M and Jones, R 1987, Inst Phys. Ser. Conf. 87 (Institute of Physics, Bristol, England), 367

Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces

  • R. Hull (a1), J. C. Bean (a1), L. Peticolas (a1), Y. H. Xie (a1) and Y. F. Hsieh (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed