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The Growth of GaN Films by Migration-Enhanced Epitaxy

  • S. E. Hooper (a1), C. T. Foxon (a2), T. S. Cheng (a2), N. J. Jeffs (a2), G. B. Ren (a3), D. E. Lacklison (a3), J. W. Orton (a3) and G. Duggan (a1)...

Abstract

Gallium Nitride epitaxial films were grown by migration enhanced epitaxy directly on sapphire (0001) without using any pre-growth substrate nitridation or low temperature buffer layers. In comparison with our material grown directly on sapphire by conventional molecular beam epitaxy, a significant improvement in the surface morphology and layer properties, measured by reflection high energy electron diffraction, X-ray diffraction, scanning electron microscopy, room temperature photoluminescence and the Hall effect, was observed for material grown by migration enhanced epitaxy.

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The Growth of GaN Films by Migration-Enhanced Epitaxy

  • S. E. Hooper (a1), C. T. Foxon (a2), T. S. Cheng (a2), N. J. Jeffs (a2), G. B. Ren (a3), D. E. Lacklison (a3), J. W. Orton (a3) and G. Duggan (a1)...

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