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Growth of GaN crystals under ammonothermal conditions

  • Michael J. Callahan (a1), Buguo Wang (a2), Lionel O. Bouthillette (a1), Sheng-Qi Wang (a3), Joseph W. Kolis (a2) and David F. Bliss (a1)...

Abstract

Growth of GaN bulk crystals under ammonothermal conditions has been developed. The experiments were performed in ammono-basic solutions in high nickel content autoclaves for up to 3 weeks. Nutrients were crystalline GaN made from vapor phase transport growth. Single crystal clusters of GaN on the order of 500 μm – 1 mm long were obtained. These crystals were spontaneously nucleated on the walls of the autoclave. Transport growth on polycrystalline GaN seeds and single crystal HVPE seeds was also achieved. GaN has a high solubility in ammono-basic solutions, on the order of several weight percent. The ammonothermal crystals were characterized by photoluminescence (PL), X-ray diffraction and SEM.

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Growth of GaN crystals under ammonothermal conditions

  • Michael J. Callahan (a1), Buguo Wang (a2), Lionel O. Bouthillette (a1), Sheng-Qi Wang (a3), Joseph W. Kolis (a2) and David F. Bliss (a1)...

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