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Growth of Epitaxial KNbO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

Thomas M. Graettinger ,
P. A. Morris ,
A. Roshko ,
A. I. Kingon ,
O. Auciello ,
D. J. Lichtenwalner  and
A. F. Chow
Thomas M. Graettinger
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7919
P. A. Morris
Affiliation:
DuPont Company, Wilmington, DE 19880-0356
A. Roshko
Affiliation:
National Institute of Standards and Technology, Boulder, CO 80303-3328
A. I. Kingon
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7919
O. Auciello
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7919 MCNC, Electronics Technology Division, Research Triangle Park, NC 27709-2889
D. J. Lichtenwalner
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7919
A. F. Chow
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7919
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Abstract

KNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency conversion of infrared light into the visible wavelength range using integrated optical devices. While epitaxial thin films of KNbO3 have previously been grown using ion beam sputtering, defects (i.e. grain boundaries, domains, surface roughness) in these films resulted in high optical losses and no measurable in-plane birefringence. Previous films were grown on MgO substrates, which have a >4% lattice mismatch with KNbO3. In the work reported here, we have grown films on MgO, MgA12O4, NdGaO3, and KTaO3 to investigate the role of lattice mismatch on the resulting film quality. Films have also been grown with and without oxygen ion assistance. The orientations, morphologies, and defects in the films were examined using x-ray diffraction and AFM to determine their relationships to the growth conditions and substrate lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 265
Copyright
Copyright © Materials Research Society 1994

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References

1. Graettinger, T.M.,. Morris, P.A., Woolcott, R.R., Zumsteg, F.C., Chow, A.F., and Kingon, A.I. in Ferroelectric Thin Films III, (Mater. Res. Soc. Proc. 310, Pittsburgh, PA, 1993) 301.Google Scholar
2. Nunomura, K., Ishitani, A., Matsubara, T., and Hayashi, I, J. Cryst. Growth 45, 355 (1978).Google Scholar
3. Hewig, G.H. and Jain, K., J. Appl. Phys. 54,57 (1983).Google Scholar
4. Lu, H., Wills, L., Wessels, B., Lin, W., Zhang, T., Wong, G., Neumayer, D., and Marks, T., Appl. Phys. Lett. 62, 1314 (1993).CrossRefGoogle Scholar
5. Reisman, A. and Holtzberg, F., J. Am. Chem. Soc. 77, 2115 (1955).Google Scholar
6. Chow, A.F., Lichtenwalner, D. J., Woolcott, R.R. Jr., Graettinger, T.M., Boatner, L.A., Parikh, N.R., Auciello, O., and Kingon, A.I., (submitted to Applied Physics Letters, 1994).Google Scholar
7. Thöny, S. Schwyn, Lehmann, H.W., and Günter, P., Appl. Phys. Lett. 61, 373 (1992).Google Scholar
8. Rou, S.H., Graettinger, T.M., Auciello, O., and Kingon, A.I. in Heteroepitaxy of Dissimilar Materials, (Mater. Res. Soc. Proc., Pittsburgh, PA, 1991).Google Scholar
9. Graettinger, T.M., Lichtenwalner, D.J., Chow, A.F., Auciello, O., Kingon, A.I., and Morris, P., presented at the 8th ISIF, Monterey, CA, 1994. (To be published in Integrated Ferroelectrics).Google Scholar
10. Hiskes, R., DiCarolis, S.A., Young, J.L., Laderman, S.S. Jacowitz, R.D., and Taber, R.C., Appl. Phys. Lett. 59, 606 (1991).CrossRefGoogle Scholar