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Growth of Epitaxial CoSi2 and NiSi2 on (111), (100), and (110) Si at Room Temperature

Published online by Cambridge University Press:  28 February 2011

R. T. Tung  and
F. Schrey
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N. J. 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N. J. 07974
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Abstract

Growth of high quality type-B oriented NiSi2 and CoSi2 on Si(111) at room temperature was demonstrated recently. It is proposed that a few monolayers of metal reacts with Si(111) to form type B disilicide which then serves as a template for subsequent homoepitaxial growth during co-deposition. Thin, pre-annealed, silicide layers on Si (100) and (110) arc used as templates to demonstrate the homoepitaxial growth of NiSi2 and CoSi2 along these two directions at room temperature. The high temperatures usually required for the formation of NiSi2 and CoSi2 are related to the nucleation and mass transport processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 243
Copyright
Copyright © Materials Research Society 1990

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