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Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

  • Mark A. Stan (a1), Martin O. Patton (a1), Hemasiri K. M. Vithana (a1), David L. Johnson (a1), Joseph D. Warner (a2), Nancy D. Piltch (a2), Jinwei Yang (a3) and Pirouz Pirouz (a3)...

Abstract

Silicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.

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Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

  • Mark A. Stan (a1), Martin O. Patton (a1), Hemasiri K. M. Vithana (a1), David L. Johnson (a1), Joseph D. Warner (a2), Nancy D. Piltch (a2), Jinwei Yang (a3) and Pirouz Pirouz (a3)...

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