Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T09:32:12.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Diamond Anvils for High-Pressure Research by Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Andrew Israel  and
Yogesh K. Vohra
Andrew Israel
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, AL 35294–1170
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), Birmingham, AL 35294–1170
Get access

Abstract

Gem quality diamond crystals are employed as anvils in high-pressure diamond cell research. Homoepitaxial growth experiments by microwave plasma-assisted chemical vapor deposition (MPCVD) have produced 1.76 mm (diameter) by 0.65 mm (thickness) sized diamonds. We report fundamental studies on diamond growth rate and quality as a function of reactor pressure and methane concentration, in a hydrogen plasma. By varying the growth conditions, large, single crystal diamond can be produced, which is ideal for manufacturing high pressure anvils.

Traditional high pressure, high temperature (HPHT) techniques for production of synthetic diamond anvils are extremely expensive and chemical vapor deposition (CVD) provides an economically viable alternative. We report diamond growth rates up to 0.32 mg/hr, which are comparable to HPHT growth rates, and crystal quality approaching that of gem diamond. When perfected, diamond anvils produced from chemical vapor deposition methods could replace those manufactured by high pressure, high temperature synthesis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 179
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Liu, J. and Vohra, Y. K., Appl. Phys. Lett. 68 (15), pp 2049–2051, (1996).Google Scholar
2. Wild, C., Kohl, R, Herres, N., Muller-Sebert, W., and Koidl, P., Dia. Rel. Mat. 3, pp. 373–81 (1994).Google Scholar
3. Angus, J., Cassidy, D., Wang, L., Wang, Y., Evans, E., Kovach, C., and Tamor, M., in Mechanical Behavior of Diamond and Other Forms of Carbon, pp. 45–55, (1995).Google Scholar
4. Vohra, Y. K., Israel, A., and Catledge, S., App. Physics Letters 71 (3), pp. 321–323, (1997).Google Scholar
5. McCauley, T., Israel, A., Vohra, Y., and Tarvin, J., Review of Scientific Instruments 68 (1997).Google Scholar
6. May, P. W., Endeavour Magazine 19 (3), pp 101–106, (1995).Google Scholar
7. Tolt, Z. L., Heatherly, L., Clausing, R.E., and Feigerle, C., Applications of Diamond Films and Related Materials: Third International Conference, pp. 407–411, (1995).Google Scholar
8. Vagarali, S., Lee, M., and De Vries, R.C., J. of Hard Materials 1, 233 (1990).Google Scholar