- Cited by 19
Zhu, W. Stoner, B.R. Williams, B.E. and Glass, J.T. 1991. Growth and characterization of diamond films on nondiamond substrates for electronic applications. Proceedings of the IEEE, Vol. 79, Issue. 5, p. 621.
Gildenblat, G.S. Grot, S.A. and Badzian, A. 1991. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films. Proceedings of the IEEE, Vol. 79, Issue. 5, p. 647.
Gildenblat, G.S. Grot, S.A. Hatfield, C.W. and Badzian, A.R. 1991. High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method. IEEE Electron Device Letters, Vol. 12, Issue. 2, p. 37.
Chu, C. J. D’Evelyn, M. P. Hauge, R. H. and Margrave, J. L. 1991. Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studies. Journal of Applied Physics, Vol. 70, Issue. 3, p. 1695.
Koike, J. Parkin, D. M. and Mitchell, T. E. 1992. Displacement threshold energy for type IIa diamond. Applied Physics Letters, Vol. 60, Issue. 12, p. 1450.
Sutcu, L. F. Thompson, M. S. Chu, C. J. Hauge, R. H. Margrave, J. L. and D’Evelyn, M. P. 1992. Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy. Applied Physics Letters, Vol. 60, Issue. 14, p. 1685.
Masood, A. Aslam, M. Tamor, M. A and Potter, T. J. 1992. Synthesis and electrical characterization of boron‐doped thin diamond films. Applied Physics Letters, Vol. 61, Issue. 15, p. 1832.
Chu, C. J. Hauge, R. H. Margrave, J. L. and D’Evelyn, M. P. 1992. Growth kinetics of (100), (110), and (111) homoepitaxial diamond films. Applied Physics Letters, Vol. 61, Issue. 12, p. 1393.
Behr, D. Wagner, J. Wild, C. and Koidl, P. 1993. Homoepitaxial13C diamond films studied by micro‐Raman and photoluminescence spectroscopy. Applied Physics Letters, Vol. 63, Issue. 22, p. 3005.
May, P.W. Everitt, N.M. Trevor, C.G. Ashfold, M.N.R. and Rosser, K.N. 1993. Diamond deposition in a hot-filament reactor using different hydrocarbon precursor gases. Applied Surface Science, Vol. 68, Issue. 3, p. 299.
Joshi, R. P. Schoenbach, K. H. Molina, C. and Hofer, W. W. 1993. Studies of electron‐beam penetration and free‐carrier generation in diamond films. Journal of Applied Physics, Vol. 74, Issue. 3, p. 1568.
1993. The optical and electronic properties of semiconducting diamond. Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences, Vol. 342, Issue. 1664, p. 233.
Cancel, L.M. Figueroa, O.L. Weiner, B.R. and Morell, G. 1999. In Situ Ellipsometry Study of the Diamond Film Evolution Process. MRS Proceedings, Vol. 580, Issue. ,
Morell, G. Cancel, L. M. Figueroa, O. L. González, J. A. and Weiner, B. R. 2000. Structural evolution during chemical vapor deposition of diamond thin films. Journal of Applied Physics, Vol. 88, Issue. 10, p. 5716.
Thonke, Klaus 2003. The boron acceptor in diamond. Semiconductor Science and Technology, Vol. 18, Issue. 3, p. S20.
Machlin, E.S. 2005. Materials Science in Microelectronics I. p. 97.
Wort, Chris J.H. and Balmer, Richard S. 2008. Diamond as an electronic material. Materials Today, Vol. 11, Issue. 1-2, p. 22.
Saha, Niloy C. Takahashi, Kazutoshi Imamura, Masaki and Kasu, Makoto 2018. Band Alignment of Al2 O3 Layer Deposited NO and SO2 Exposed (001) H-Diamond Heterointerfaces Studied by Synchrotron Radiation X-Ray Photoelectron Spectroscopy. physica status solidi (a), Vol. 215, Issue. 22, p. 1800237.
Saha, Niloy Chandra and Kasu, Makoto 2019. Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements. Diamond and Related Materials, Vol. 91, Issue. , p. 219.
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Diamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.
Hide All1. Liao, S. Y., Microwave Devices and Circuits (Prentice-Hall, Englewood Cliffs, N.J., 1985), pp. 302–304.2. Sze, S. M. and Gibbons, G., Appl. Phys. Lett. 8, 111 (1966).3. Bogdanov, A. V., Vikulin, I. M., and Bogdanova, T. V., Sov. Phys. Semicond. 16, 720 (1982).4. Bazhenov, V. K., Vikulin, I. M., and Gonar, A. G., Soy. Phys. Semicond. 19, 829 (1985).5. Konoirova, E. A., Kuznetsov, Yu. A., Sergienko, V. F., Tkachenko, S. D., Tsikunov, A. V., Sov. Phys. Semicond. 17, 146 (1983).6. Collins, A. T., Semicond. Sci. Tech. 4, 605 (1989).7. Collins, A. T. and Lightowlers, E. C., in The Properties of Diamond, ed. Field, J. E. (Academic Press, New York, 1979), pp. 80–105.8. Irvin, J. C., Bell Syst. Tech. J. 41, 387 (1962).9. Efermow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. Sci. Technol. B 3, 416 (1985).10. Moazed, K. L., Nguyen, R., and Zeider, J. R., IEEE Electron Device Lett. EDL–7, 350 (1988).11. Geis, M. W., Rothschild, M., Kunz, R. R., Aggarwal, R. L., Wall, K. F., Parker, C. D., McIntosh, K. A., Efremow, N. N., Zayhowski, J. J., and Ehrlich, D. J., Appl. Phys. Lett. 55, 2295 (1989).12. Derjaguin, B. V., Spitsyn, B. V., Goridetsky, A. E., Zakharov, A. P., Bouilov, L. L., and Sleksenko, A. E., J. Cryst. Growth 31, 44 (1975).13. Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62, 642 (1983).14. Geis, M. W., in the Proceedings of the SDIO/IST-ONR Diamond Technology Initiative Symposium (Crystal City, VA, 1989).15. Geis, M. W., Gregory, J. A., and Pate, B. B., submitted to IEEE Trans. Electron Devices.16. Okano, K., Naruki, H., Akiba, Y., Kurosu, T., lida, M., Hirose, Y., and Nakamura, T., Jpn. J. Appl. Phys. 28, 1066 (1989).17. Badzian, A. R. and Badzian, T., in the Proceedings of the SDIO/IST-ONR Diamond Technology Initiative Symposium (Crystal City, VA, 1989).18. Rothschild, M., Arnone, C., and Ehrlich, D. J., J. Vac. Sci. Technol. B 4, 310 (1986).19. The SIMS was performed by Charles Evans and Associates, 301 Cheapeake Drive, Redwood, CA 94063.
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