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Growth of Cuinse2 on (lOO) Gaas by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Bae-Heng Tseng  and
Song-Bin Lin
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC.
Song-Bin Lin
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC.
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Abstract

Domain-free epitaxial layer of CuInSe2 has been successfully grown on (lOO) GaAs at the substrate temperature above 470°C. Both TEM and X-ray analyses were performed to verify this result. The CuInSe2/GaAs interface was examined by high resolution TEM. For films high in indium, InSe was identifed by X-ray diffraction. TEM observations showed that the InSe precipitates were rectangular in shape and the habit plane was determined to be (110). Photo-assisted MBE technique had also been used for the growth of CuInSe2 films with high crystalline quality. The epitaxial temperature was significantly reduced to 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 187
Copyright
Copyright © Materials Research Society 1994

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References

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