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Growth of CoSi2/Si Multilayer Structures

  • T. L. Ljni (a1), P. J. Grunthaner (a1), F. D. Schowengerdt (a1), R W. Fathauer (a1), J. H. Mazur (a2), K T. Chang (a2), S. Hashimoto (a3) and Q. Xia (a3)...

Abstract

Growth techniques for very thin CoSi2 and Si layers for multilayer applications have been studied. CoSi2 layers without observable pinholes are grown by atechnique utilizing the room-temperature codeposition of Co and Si in stoichiometric ratio with a Si cap, followed by annealing. The crystallinity of the resulting CoSI2 layers annealed at various temperatures was studied by in-situ Rutherford backscattering channeling spectroscopy. The channeling minimum yield decreases with increasing annealing temperature, and drops sharply at ~ 570ºC. Si overgrowth was studied on CoSi2 by a Si template technique, which utilizes the deposition of a thin amorphous Si layer followed by annealing prior to the growth of the bulk of the Si layer. The effect of Si thickness and annealing temperature on Islanding of the Si overlayer was studied by Auger electron spectroscopy. Critical temperatures for a numberof Si thicknesses were identified, above which islanding of these layers occurs.

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Growth of CoSi2/Si Multilayer Structures

  • T. L. Ljni (a1), P. J. Grunthaner (a1), F. D. Schowengerdt (a1), R W. Fathauer (a1), J. H. Mazur (a2), K T. Chang (a2), S. Hashimoto (a3) and Q. Xia (a3)...

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