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Growth of Cerium Oxide Buffer Layers and Superconducting thin films on Silicon

Published online by Cambridge University Press:  26 February 2011

S Amirhaghi ,
F Beech ,
V Craciun ,
A Sajjadi ,
M Vickers ,
S Tarling ,
P Barnes  and
W Andboydi
S Amirhaghi
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE
F Beech
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE
V Craciun
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE
A Sajjadi
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE
M Vickers
Affiliation:
Department of Crystallography, Birkbeck College, Malet Street, London WC1E 7HX
S Tarling
Affiliation:
Department of Crystallography, Birkbeck College, Malet Street, London WC1E 7HX
P Barnes
Affiliation:
Department of Crystallography, Birkbeck College, Malet Street, London WC1E 7HX
W Andboydi
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE
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Abstract

Films of CeO2 have been grown on Si and glass substrates using the laser ablation deposition technique. X-ray diffraction measurements for the films deposited on glass indicated that they are the same as films grown on Si covered with the native oxide. This evidence supports a picture in which chemical rather than crystal-lographic effects constrain the film growth. The crystal quality for films grown on Si was shown to improve with increasing film thickness away from the amorphous layer. Low cooling rates as well as reduced film thickness were effective in avoiding the formation of micro-cracks. The surface morphology was shown to be dependent on the laser wave-length as well as the oxygen partial pressure. Thin films of YBa2Cu3O7δ could easily be grown on CeO2/Si showing c-axis orientation, whereas the growth of BiSrCaCuO (2212) on CeO2/Si resulted in the two films mixing with each other.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 501
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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