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Growth of a-Si:H Films by Remote Plasma Enhanced CVD (RPECVD)

  • GN Parsons (a1), DV Tsu (a1) and G Lucovsky (a1)

Abstract

We have used Remote Plasma CVD with plasma excited He to grow films of hydrogenated amorphous silicon, a-Si:H, with substrate temperatures, Ts, between 38 and 400°C. These films differ from glow discharge (GD) and sputtered films, most notably in the Ts dependence of the hydrogen bonding environments (SiH, SiH2, etc.) and the photoconductivity. For RPECVD of a-Si:H, we have investigated: 1) the effect of replacing He in the plasma with Ar; 2) the silane mass spectrum and film growth rate as a function of rf power supplied to the plasma; and 3) the helium emission lines and hydrogen concentration in the films as a function of dilution of the He plasma with oxygen and nitrogen. Based on these observations we present a model for the deposition chemistry that includes SiH3 radicals as precursors to film growth.

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[1] Tsu, D.V., Lucovsky, G. and Mantini, M., Phys.Rev.B 33,7069(1986).
[2] Tsu, D.V., Lucovsky, G., Mantini, M. and Chao, S.S., J.Vac.Sci. Technol.A 5, 1283 (1987).
[3] Parsons, G.N., Tsu, D.V. and Lucovsky, G., 1987 AVS National Symposium, J.Vac.Sci.Technol.A. to be published.
[4] Tsu, D.V., Parsons, G.N., and Lucovsky, G., 1987 AVS National Symposium, J.Vac.Sci.Technol.A. to be published.
[5] Matsuda, A. and Tanaka, K., Thin Solid Films 92, 171 (1982).
[6] Tanaka, K. and Matsuda, A., Mat. Sci. Reports 2, 139 (1987).
[7] Deloche, R., Monchicourt, P., Cheret, M. and Lambert, F., Phys. Rev. A 13, 1140 (1976).

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