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Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE

Published online by Cambridge University Press:  01 February 2011

Junqing Q. Xie ,
J. W. Dong ,
A. Osinsky ,
P. P. Chow ,
Y. W. Heo ,
D. P. Norton ,
S. J. Pearton ,
X. Y. Dong ,
C. Adelmann  and
C. J. Palmstrøm
Junqing Q. Xie
Affiliation:
xie@svta.com, SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN, 55344, United States, 952-934-2100, 952-934-2737
J. W. Dong
Affiliation:
dong@svta.com
A. Osinsky
Affiliation:
osinsky@svta.com
P. P. Chow
Affiliation:
chow@svta.com
Y. W. Heo
Affiliation:
spear@mse.ufl.edu
D. P. Norton
Affiliation:
spear@mse.ufl.edu
S. J. Pearton
Affiliation:
spear@mse.ufl.edu
X. Y. Dong
Affiliation:
xdong@cems.umn.edu
C. Adelmann
Affiliation:
adelmann@cems.umn.edu
C. J. Palmstrøm
Affiliation:
palms001@umn.edu
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Abstract

ZnO thin films have been epitaxially grown on r-plane sapphire by RF-plasma-assisted molecular beam epitaxy. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies indicate that the epitaxial relationship between ZnO and r-plane sapphire is (1120)ZnO // (1102)sapphire and [0001]ZnO // [1101]sapphire. Atomic force microscopy measurements reveal islands extended along the sapphire [1101] direction. XRD omega rocking curves for the ZnO (1120) reflection measured either parallel or perpendicular to the island direction suggest the defect density anisotropy along these directions. Due to the small lattice mismatch along the ZnO [0001] direction, few misfit dislocations were observed at the ZnO/Al2O3 interface in the high-resolution cross-sectional TEM image with the zone axis along the ZnO [1100] direction.

Keywords

crystal growthmolecular beam epitaxy (MBE)II-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-01
Copyright
Copyright © Materials Research Society 2006

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References

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