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Growth Mechanisms of YBa2Cu3O7-δ Thin Films Post Annealed at a Low Oxygen Partial Pressure

Published online by Cambridge University Press:  15 February 2011

S. Y. Hou ,
D. J. Werder ,
Julia M. Phillips  and
J. H. Marshall
S. Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. J. Werder
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. H. Marshall
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The growth mechanism of YBa2Cu3O 7-= thin films grown by the BaF2 post annealing process at low oxygen partial pressure have been studied by transmission electron microscopy. Under the annealing conditions of po2 = 4 Torr and 700°C, BaCuO2 and Y2 Cu2O5 precipitates develop from stoichiometric film precursors of YBCO during annealing. A growth model is proposed based on the observations. In addition, early stage nucleation and growth of both c- and a-axis oriented grains at the substrate interface were observed in quench annealed cross-sectional samples. 90° [100] symmetrical boundaries form between the a- and c-axis oriented grains. The possible effects of these boundaries are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 201
Copyright
Copyright © Materials Research Society 1993

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