Skip to main content Accessibility help
×
Home

Growth by Low Pressure Chemical Vapor Deposition of Silicon Quantum Dots on Insulator for Nanoelectronics Devices

  • T. Baron (a1), F. Martin (a2), P. Mur (a2), C. Wyon (a2), M. Dupuy (a2), C. Busseret (a3), A. Souifi (a3) and G. Guillot (a3)...

Abstract

We present the first comparative study of nucleation and growth of Si quantum dots on SiO2, SiOxNy and Si3N4 substrates using silane Low Pressure Chemical Vapor Deposition at low temperature (570–610°C). The samples are investigated by Atomic Force Micoscopy, Scanning Electron Microscopy, High Resolution Transmission Electron Microscopy and Spectroscopic Ellipsometry. We confirm that the chemical nature of the surface and precisely the presence of SiO bonds decreases the Si quantum dot density. By optimising the deposition parameters, a Si dot density of 1012 cm−2 can be obtained below 600°C on a pure Si3N4 surface. The influence of hydrogen, provided by silane decomposition, on the Si nucleation mechanism will be discussed.

Copyright

References

Hide All
1. Nakagawa, M. Fukudu, Miyazaki, S., and Hirose, M., Mat. Res. Soc. Symp. Proc. Vol. 452, 243 (1997).10.1557/PROC-452-243
2. , Claassen, and Bloem, J., J. Electrochem. Soc. Vol. 128, No. 6, 1353 (1981).10.1149/1.2127635
3. Nakajima, Y. Sugita, Kawamura, K., Tomita, H., and Yokoyama, N., Jpn. J. Appl. Phys Vol. 35, L189 (1996).10.1143/JJAP.35.L189
4. Choi, H., Hwang, S. W., Kim, I. G., Shin, H. C., Kim, Y., and Kim, K., Appl. Phys. Lett. Vol. 73, No. 21, 3129 (1998).10.1063/1.122695
5. Kim, G., Han, S., Kim, H., Lee, J., Choi, B., Hwang, S., Aim, D., and Shin, H., IEDM Vol. 111, (1998).
6. Ogbuji, L.U.T. and Jayne, D.T., J. Electrochem. Soc. Vol. 140, No. 3, 759 (1993).10.1149/1.2056154
7. See, e. g., Kobeda, E., and Irene, E.A., J. Vac. Sci. Technol. B 6, 574 (1988); J. T. Fitch, C. H. Bjorkman, G. Lucovsky, F. H. Pollak, and X. Yin, J. Vac. Sci. Technol. B 7, 775 (1989).10.1116/1.584402
8. Zunger, A., and Ling-Wang, Wang, Applied Surface Science 102, 350 (1996).10.1016/0169-4332(96)00078-5
9. Proot, C. Delerue, and Allan, G., Appl. Phys. Lett. 61, 1948 (1992).10.1063/1.108372
10. Harbeke, L. Krausbauer, Steigmeier, E. F., Widmer, A. E., Kappert, H. F., and Neugebauer, G., J. Electrochem. Soc., Solid State Science and Technology Vol. 131, No. 3, 675 (1984).

Growth by Low Pressure Chemical Vapor Deposition of Silicon Quantum Dots on Insulator for Nanoelectronics Devices

  • T. Baron (a1), F. Martin (a2), P. Mur (a2), C. Wyon (a2), M. Dupuy (a2), C. Busseret (a3), A. Souifi (a3) and G. Guillot (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed