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Growth and Structure of Ti2O3 and TiO2 Thin Films on (0001) α-Al2O3 Substrates

Published online by Cambridge University Press:  10 February 2011

T. Wagner  and
M. Agarwal
T. Wagner
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
M. Agarwal
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
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Abstract

Titanium oxide thin films were grown at different temperatures on (0001) α-Al2O3 substrates by molecular beam epitaxy (MBE). The films grown at room temperature were amorphous. Annealing at 1223K of 6 nm thick films led to the formation of TiO2 with an epitaxial orientation relationship (100)<001>TiO2 ∥ (0001)<01101>Al2O3 with the substrate. However, on similar heat treatment, thicker 100 nm films formed polycrystalline TiO2. At a deposition temperature of 1223K epitaxial Ti2O3 films with orientation relationship (0001)<2110>Ti2O3 ∥ (0001)<21101>Al2O3 were formed. The lattice mismatch between Ti2O3 and α-Al2O3 was accomodated by a regular arrangement of misfit dislocations at the Ti2O3/α-Al2O3 interface. By comparing the microstructural evolution of the annealed films with that of those films grown at high temperature, mechanisms governing grain growth in polycrystalline titanium oxide films were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 81
Copyright
Copyright © Materials Research Society 1997

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References

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