Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-24T14:11:05.486Z Has data issue: false hasContentIssue false

GROWTH AND STRUCTURE OF COMPOSITIONALLY MODULATED AMORPHOUS SUPERLATTICES

Published online by Cambridge University Press:  28 February 2011

P. D. Persans
Affiliation:
Exxon Research and Engineering Company Annandale, New Jersey 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Annandale, New Jersey 08801
T. Tiedje
Affiliation:
Exxon Research and Engineering Company Annandale, New Jersey 08801
C. Roxlo
Affiliation:
Exxon Research and Engineering Company Annandale, New Jersey 08801
Get access

Abstract

We review recent measurements of the structure of amorphous solidsolid interfaces using compositionally modulated structures to increase the density of interfaces in thin film materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Esaki, L. and Tsu, R., IBM J. Res. Dev. 14, 61, (1970).CrossRefGoogle Scholar
2. Ploog, K. and Dohler, G. H., Adv. Phys. 7, 285, (1983).CrossRefGoogle Scholar
3. Chang, C. A., Serrano, C. M., Chang, L. L. and Esaki, L., J. Vac. Sci. Technol. 17, 603, (1980).CrossRefGoogle Scholar
4. Hull, R., Gibson, J. M., and Bean, J. C., Appl. Phys. Lett. 46, 179 (1985).CrossRefGoogle Scholar
5.J. M. Van Hove, Pukite, P. R., and Cohen, P. I., J. Vac. SciT Technol. B 3, 563 (1985).Google Scholar
6. Abeles, B. and Tiedje, T., in Semiconductors and Semimetals, 21, Part C (Academic Press, 1984), p. 407.CrossRefGoogle Scholar
7. Abeles, B., Tiedje, T., Liang, K. S., Deckman, H. W., Stasiewski, H. E., Scanlon, J. C. and Eisenberger, P. M., J. Non-Cryst. Solids 66, 351, (1984).CrossRefGoogle Scholar
8. Persans, P. D., Abeles, B., Scanlon, J. and Stasiews-kV-, H., in Proc. of the 17th Int'l. Conf. on Phys. of Semicond., San Francisco 1984, ed. by Chadi, D. J. and Harrison, W. A., (Springer, New York, 1985), p. 499.CrossRefGoogle Scholar
9. Deckman, H. W., Dunsmuir, J., Abeles, B., Appl. Phys. Lett. 46, 171 (1984).CrossRefGoogle Scholar
10. Cheng, R., Wen, S., Feng, J., and Fritzsche, H., Appl. Phys. Lett., 46, 592 (1985).CrossRefGoogle Scholar
11. Persans, P. D., Ruppert, A. F., Abeles, B. and Tiedje, T., Phys. Rev. B. 32, 5558, (1985); J. de Physique (in press).CrossRefGoogle Scholar
12. Abeles, B., Persans, P. D., Stasiewski, H. S., Yang, L., and Lanford, W., Proc. of Int'l. Conf. on Amorphous and Liquid Semiconductors, (Rome, 1985).Google Scholar
13. Maley, N. and Lannin, J. S., Phys. Rev. B 31, 5577 (1985).CrossRefGoogle Scholar
14. Beeman, D., Tsu, R. and Thorpe, M. F., Phys. Rev. B 32, 874 (1985).CrossRefGoogle Scholar
15. Morimoto, A., Oozura, S., Kumeda, M. and Shimizu, T., Sol. St. Commun., 47, 773 (1983).CrossRefGoogle Scholar
16. Abeles, B., Wronski, C. R., Persans, P. D. and Tiedje, T., Acta Met. (in press).Google Scholar
17. Abeles, B., Yang, L. Y., Persans, P. D. and Stasiewski, H., Appl. Phys. Lett. (in press).Google Scholar
18. Roxlo, C., Abeles, B. and Tiedje, T., Phys. Rev. Lett., 52, 1994, (1984).CrossRefGoogle Scholar
19. Tiedje, T., Roxlo, C. B., Abeles, B. and Wronski, C. R., PFoc. of the 16th Conf. on Solid State Devices and Materials, Kobe, Japan, 1984, p. 531.Google Scholar
20. Tiedje, T., Wronski, C. R., Persans, P. D. and Abeles, B., Proc. Int'l Conf. on Amorphous and Liquid Semicond., Rome, 1985.Google Scholar
21. Tiedje, T., Abeles, B., and Brooks, B. G., Phys. Rev. Lett. 54, 2545 (1985).CrossRefGoogle Scholar
22. Wronski, C. R., Persans, P. D. and B. Abeles (to be publish-ed-)Google Scholar