Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-20T02:05:47.896Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Stress Characterization of LPCVD SiC Films Deposited on Bare, Carbonized and Oxidized Si(001) Substrates

Published online by Cambridge University Press:  10 February 2011

E Hurtós ,
J Rodríguez-Viejo ,
K Zekentess  and
M. T Clavaguera-Mora
E Hurtós
Affiliation:
Grup de Física de Materials I. Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
J Rodríguez-Viejo
Affiliation:
Grup de Física de Materials I. Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
K Zekentess
Affiliation:
Foundation for Research and Technology, Heraklion, Crete, Greece.
M. T Clavaguera-Mora
Affiliation:
Grup de Física de Materials I. Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
Get access

Abstract

A simple LPCVD reactor has been used to deposit 3C-SiC on oxidized, bare and MBE carbonized Si (001) wafers. The deposition experiments were conducted at different temperatures, times and gas flows pyrolizing tetramehylsilane (TMS). Voids at the interface and hillock formation were observed preferentially on the bare Si substrates due to Si outdiffusion. The best LPCVD films were obtained at temperatures around 1170°C on smooth single-crystalline carbonized substrates. The nucleation and growth of 3C-SiC on Si02/Si substrates proceeds at a slower rate with the formation of 3D island with a high aspect ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 173
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nishino, S., Powell, J.A., Will, H.A., Appl. Phys. Lett., 42, 460 (19983).Google Scholar
[2] Zekentes, K.,Papaioannou, V., Pecz, B. and Stoemenos, J., J. Cryst. Growth,.157, (1995) 392–399.Google Scholar
[3] Li, J.P., Steckl, A.J., J.Electrochem. Soc., 142, 634 (1995).Google Scholar
[4] Zekentes, K., Becourt, N., Androulidaki, M., Tsagaraki, K., Stoemenos, J., Bluet, J.M., Camassel, J., Pascual, J., Appl. Surf. Sci. 102, 1996, 22.Google Scholar
[5] Rodriguez-Viejo, J., Stoemenos, J., Clavaguera, N., Clavaguera-Mora, M. T., J. Crystal Growth 155, (1995) 214–222.Google Scholar
[6] Yoshinobu, T, Mitsui, H., tarui, Y., Fuyuki, T., Matsunami, H., J.Appl. Phys., 72,2006 (1992).Google Scholar
[7] Lee, K.W., Yu, K.S., Bae, J.W., Kim, Y., International Conference on Silicon Carbide, IIInitrides and Related Materials, Sweden. p. 208.Google Scholar
[8] Takahashi, K., Nishino, S., Saraie, J., J.Electrochem.Soc., 139 (1992) 3565–3571.Google Scholar
[9] Golecki, I., Reidinger, F., Marti, J., Appl. Phys. Lett., 60 (1992) 1703–1705.Google Scholar