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Growth and Microstructure of Aluminum Nitride Thin Films

  • M. Grant Norton (a1), Paul G. Kotula (a1), Jian Li (a1), Stuart Mckernan (a1), Kathryn P.B. Cracknell (a1), C. Barry Carter (a1) and James W. Mayer (a1)...

Abstract

The synthesis of aluminum nitride thin films by pulsed-laser ablation is demonstrated. The films were formed on single-crystal sapphire and graphite substrates. A number of techniques were used to characterize the films: transmission and scanning electron microscopy, Rutherford backscattering spectrometry and x-ray diffraction.

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1. Werdecker, W. and Aldinger, F., IEEE Trans. Components, Hybrids and Manuf. Technol. CHMT7, 399 (1984)
2. Dryburgh, P.M., J. Cryst. Growth 94, 23 (1989)
3. Norton, M.G., Kotula, P.G., and Carter, C.B., Appl. Phys. Lett. (submitted for publication)
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5. Norton, M.G., Kotula, P.G., and Carter, C.B., Proceedings of the 49th Annual Meeting of the Electron Microscopy Society of America (submitted for publication)
6. Norton, M.G., Kotula, P.G., and Carter, C.B. (unpublished)
7.see, for example papers in Laser Ablation for Materials Synthesis, edited by Paine, D.C. and Bravman, J.C. (Mater. Res. Soc. Symp. Proc. 191, Pittsburgh PA, 1990)
8. Norton, M.G. and Carter, C.B., Physica C (submitted for publication)
9. Morgan, J.S., Bryden, W.A., Kistenmacher, T.J. et al. J. Mater. Res. 5, 2677 (1990)
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