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Growth and Doping of Zinc Selenide by Molecular Bean Epitaxy

  • J.M. Depuydt (a1), H. Cheng (a1), M.A. Haase (a1) and J.E. Potts (a1)

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Recently, with the advent of thermal nonequilibrium growth techniques like molecular beam epitaxy and metalorganic chemical vapor deposition, great progress has been made in overcoming some of the problems traditionally encountered in the growth and doping of ZnSe. Breakthroughs have been made in several areas including the growth of high quality undoped films, in intentional n-type doping and, most importantly, in p-type doping. In this paper we will review the progress made in the growth and doping of ZnSe by molecular beam epitaxy.

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Growth and Doping of Zinc Selenide by Molecular Bean Epitaxy

  • J.M. Depuydt (a1), H. Cheng (a1), M.A. Haase (a1) and J.E. Potts (a1)

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