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Growth and Doping Kinetics of GexSil-x Structures by Limited Reaction Processing

  • P.M. Garone (a1), J.C. Sturm (a1), P.V. Schwartz (a1), S.A. Schwarz (a2) and B. Wilkens (a2)...

Abstract

We have investigated the growth rate and boron doping of Sil-xGex epitaxial films grown by Limited Reaction Processing The growth experiments were carried out at a pressure of 6.0 torr with growth temperatures ranging from 625°C to 1000°C. The growth rate increases rapidly upon the additon of a small germane flow to the dichlorosilane in the reaction-rate-limited growth regime, and can not be explained simply by germanium incorporation. The presence of germane can increase the silicon growth rate by up to a factor of one hundred. Boron doping was also studied at high concentrations of boron in Si and Sil-xGex epitaxial films as a function of diborane flow and growth rate supports a simple kinetic model rather than an equilibrium model.

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1. Bean, J.C., Sheng, T.T., Feldman, L.C., Fiory, A.T. and Lynch, R.T., Appl. Phys. Lett. 44, 102 1984.
2. Gibbons, J.F., Gronet, C.M. and Williams, K.E., Appl. Phys. Lett. 47, 721 1985.
3. Uram, Myerson, et. al., Electronic Materials Conference, Boulder CO. 1988.
4. Ghandi, S.K., VLSI Fabrication Principles, p. 70, Wiley-Interscience, 1983.

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