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Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates

Published online by Cambridge University Press:  15 March 2011

S.R. Sheng ,
M. Dion ,
S.P. Mcalister  and
N.L. Rowell
S.R. Sheng
Affiliation:
Device Physics, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
M. Dion
Affiliation:
SiGe Semiconductor, 2680 Queensview Drive, Ottawa, ON K2B 8J9, Canada
S.P. Mcalister
Affiliation:
Device Physics, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
N.L. Rowell
Affiliation:
Institute for National Measurement Standards, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
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Abstract

High-quality short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor. These superlattices were characterized by high-resolution x-ray diffraction (HRXRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL). HRXRD, AES, and XTEM results confirm that the materials deposited are high crystal-quality superlattice layers with abrupt interfaces and excellent thickness and composition uniformity across superlattices of 5 periods. AFM images show similar surface RMS roughness of much less than 1 nm for both the top layer surface and the starting substrate surface, indicating very smooth surfaces. PL measurements further confirm material quality and composition, and show sharp, well-resolved near band-edge BE and FE PL and strong broad sub-gap PL perhaps related to direct-gap superlattice transitions. The materials grown here are very promising for applications of both high-speed electronic devices and high-efficiency optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A3.6
Copyright
Copyright © Materials Research Society 2002

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