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Growth and Characterization of Ti3PSe4 Single Crystals

  • N. B. Singh (a1), R. H. Hopkins (a1), R. Mazelsky (a1) and M. Gottlieb (a1)

Abstract

Good quality single crystals of Ti3PSe4 were grown from the melt by the Bridgman technique following improvements in the method of purifying the parent components, and optimization of growth parameters. Crack-free crystals 8 cm in length and 17 mm in diameter were produced.

The quality of the crystals was evaluated by optical transmittance and metallographic techniques. In the range 0.7 to 14 μm the optical transmittance shows elimination of absorption bands exhibited in crystals grown without special purification steps. Etchpit studies showed that the crystals were free from inclusions and lamellar twins and that they show a uniform cross sectional etch pit density.

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References

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Shay, J. L. and Wernick, J. H., ‘Ternary chalcopyrite semiconductors, growth, electronic properties and applications’ (Pergamon Press, NY, 1975).
2. Feigelson, R. S. and Route, R. K., J. Crystal Growth 49 p. 261, (1980).
3. Singh, N. B., Hopkins, R. H., Mazelsky, R., Gaida, W., Lemmon, D. H., Feichtner, J.D. and Mazelsky, R., Mater. Letter 4 p. 21 (1985).
4. Gottlieb, M., Isaacs, T. J., Feichtner, J. D. and Roland, G. W., J. Appl. Physics 45 p. 5145 (1974).
5. Singh, N. B., Hopkins, R.H. and Mazelsky, R., J. Crystal Growth (to be communicated).
6. Singh, N. B., Gould, T. and Hopkins, R. H., J. Crystal Growth 78 p. 43 (1986).
7. Fritz, I., Isaacs, T. J., Gottlieb, M., and Morosin, B., Solid State Communications 27 p. 535 (1978).

Growth and Characterization of Ti3PSe4 Single Crystals

  • N. B. Singh (a1), R. H. Hopkins (a1), R. Mazelsky (a1) and M. Gottlieb (a1)

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