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Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires

Published online by Cambridge University Press:  01 February 2011

Marius Grundmann ,
Andreas Rahm ,
Thomas Nobis ,
Holger von Wenckstern ,
Christian Czekalla ,
Jörg Lenzner  and
Michael Lorenz
Marius Grundmann
Affiliation:
mailto:grundmann@physik.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Andreas Rahm
Affiliation:
andreas.rahm@physik.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Thomas Nobis
Affiliation:
post@thomasnobis.net, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Holger von Wenckstern
Affiliation:
wenckst@physik.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Christian Czekalla
Affiliation:
czekalla@physik.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Jörg Lenzner
Affiliation:
lenzner@rz.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Michael Lorenz
Affiliation:
mlorenz@physik.uni-leipzig.de, University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
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Abstract

ZnO nanowires are readily fabricated with a novel and unique, high-pressure pulsed laser deposition process developed recently by us. It allows the flexible and reproducible control of morphology, diameter, lenght and composition. Furthermore, we report on the electrical characterization as well as stimulated emission from a zinc oxide (ZnO) microcrystals grown by carbothermal evaporation observed by spatially resolved photoluminescence (PL) and high excitation spectroscopy (HES).

Keywords

II-VIcrystal growthelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K06-09
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Lorenz, M., Kaidashev, E.M, Rahm, A., Nobis, Th., Lenzner, J., Wagner, G., Spemann, D., Hochmuth, H., Grundmann, M., Appl. Phys. Lett. 86, 143113 (2005)Google Scholar
2. Lorenz, M., Kaidashev, E.M., Wenchstern, H.v., Riede, V., Bundesmann, C., Spemann, D., Benndorf, G., Hochmuth, H., Rahm, A., Semmelhack, H.-C., Grundmann, M., Solid State Electronics 47, 2205 (2003)Google Scholar
3. Rahm, A., Lorenz, M., Nobis, Th., Zimmermann, G., Grundmann, M., Fuhrmann, B., Syrowatka, F., Appl. Phys. A (2006)Google Scholar
4. Rahm, A., Nobis, Th., Lorenz, M., Zimmermann, G., Boukos, N., Travlos, A., Grundmann, M., Adv. Sol. St. Phys. 46 (2006)Google Scholar
5. Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., Segawa, Y., Appl. Phys. Lett. 72, 2466 (1998)Google Scholar
6. Choopun, S., Vispute, R.D., Yang, W., Sharma, R.P., Venkatesan, T., Shen, H., Appl. Phys. Lett. 80, 1529 (2002)Google Scholar
7. Lorenz, M., Lenzner, J., Kaidashev, E.M., Hochmuth, H., Grundmann, M., Ann. Phys. (Leipzig) 13, 39 (2004)Google Scholar
8. von Wenckstern, H., Weinhold, S., Biehne, G., Pickenhain, R., Schmidt, H., Hochmuth, H., Grundmann, M., Adv. Sol. Stat. Phys., 45 (2005)Google Scholar
9. Grundmann, M., The Physics of Semiconductors, An Introduction including Devices and Nanophysics (Springer, Heidelberg, 2006), chap. 8, pp. 197–218 Google Scholar
10. Ziegler, E., Heinrich, A., Oppermann, H., Stöver, G., Phys. Stat. Sol. (a) 66, 635 (1981)Google Scholar
11. Jimenez-Gonzalez, A. E., Urueta, J.A. Soto, Suarez-Parra, R., J. Cryst. Growth 192, 430 (1998)Google Scholar
12. Nobis, Th., Kaidashev, E.M., Rahm, A., Lorenz, M., Grundmann, M., Phys. Rev. Lett. 93, 103903 (2004)Google Scholar
13. Nobis, Th., Grundmann, M., Phys. Rev. A 72, 063806 (2005)Google Scholar
14. Czekalla, C., Lenzner, J., Rahm, A., Nobis, T., Grundmann, M., PLMCN proceedings, submittedGoogle Scholar
15. Klingshirn, C., Phys. Stat. Sol. B 71, 547 (1975).Google Scholar
16. Schmidt-Grund, R., Ashkenov, N., Schubert, M., Czakai, W., Faltermeier, D., Benndorf, G., Hochmuth, H., Lorenz, M., Bläsig, J., and Grundmann, M., ICPS Poster (2006)Google Scholar