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Growth and Characterization of GaN and ALxGA1−xN Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates

  • Robert F. Davis (a1), O-H. Nam (a1), T. S. Zheleva (a1), M. D. Bremser (a1), K. J. Linthicum (a1), T. Gehrke (a1), P. Rajagopal (a1), D. B. Thomson (a1) and E. P. Carlson (a1)...

Abstract

Discrete and coalesced monocrystalline layers of lateral- and pendeo-epitaxially grown GaN and AlxGal−xN layers originating from GaN stripes deposited within windows contained in SiO2 masks or from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6H-SiC(0001) substrates. Multilayer heterostructures of GaN and AlxGal−N were also achieved. Scanning and transmission electron microscopies and atomic force microscopy were used to evaluate the microstructures, the type and distribution of dislocations and the surface roughness of the resulting films. The extent and microstructural characteristics of the laterally overgrown GaN regions were a strong function of stripe orientation and temperature. These regions contained a low density of dislocations. The RMS roughness of the (1120) sidewall plane of the pendeoepitaxial structures was approximately 0.100 nm.

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