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Growth and Characterization of GaAs-Based Heterostructures on Si By Mocvd

  • W. S. Hobson (a1), S. J. Pearton (a1), K. T. Short (a1), K. S. Jones (a2), S. M. Vernon (a3), D. C. Jacobson (a1), C. R. Abernathy (a1) and R. Caruso (a1)...

Abstract

Abstract: Several different types of GaAs-AlGaAs heterostructures were grown on Si substrates by MOCVD. The defect density in as-grown samples (~108cm−2) was similar to that of GaAs layers grown directly on Si, and the crystalline quality of the material was observed to improve slightly with post-growth annealing at 900°C. We examined the diffusion of both Si and Zn dopants during this type of annealing and found only a small amount of redistribution of both species. Laser annealing of GaAs-on-Si was also examined as a method of reducing the defect density in the material - we observed substantial improvements in surface quality, but no change in sub-surface crystalline quality.

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Growth and Characterization of GaAs-Based Heterostructures on Si By Mocvd

  • W. S. Hobson (a1), S. J. Pearton (a1), K. T. Short (a1), K. S. Jones (a2), S. M. Vernon (a3), D. C. Jacobson (a1), C. R. Abernathy (a1) and R. Caruso (a1)...

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