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Growth and Characterization of Ferroelectric Pb(Zr,Ti)OM3 Thin Films by Mocvd Using A 6 Inch Single Wafer Cvd System

  • Masaru Shimizu (a1), Masashi Fujimoto (a1), Takuma Katayama (a1), Tadashi Shiosaki (a1), Kenichi Nakaya (a2), Mitsuru Fukagawa (a2) and Eiki Tanikawa (a3)...

Abstract

Ferroelectric Pb(Zr,Ti)O3(PZT) films with a perovskite phase were successfully grown by MOCVD using a 6 inch wafer CVD system. A two step growth process was proposed to obtain perovskite PZT films at high gas supplying ratios of [Zr]/([Zr]+[Ti]). The electrical properties of the PZT films obtained were measured. Large area growths of PZT films were carried out and the uniform films could be grown on the entire area of a 6 inch Si wafer. It was also found that the step coverage characteristic of the films grown by MOCVD was good.

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1. Buskirk, P.C.Van, Gardiner, R., Kirlin, P.S. and Krupanidhi, S.B., Proc.8th IEEE Int.Sym. on Applications of Ferroelectrics (Greenville, SC, USA, 1992)pp.340343.
2. Okada, M., Tominaga, K., Araki, T., Katayama, S. and Sakashita, Y., Jpn.J.Appl.Phys. 29, 718 (1990).
3. Nakai, T., Tabuchi, T., Sawado, Y., Kobayashi, I. and Sugimori, Y., Jpn.J.Appl.Phys. 31, 2992 (1992).
4. Yamazaki, H., Tsuyama, T., Kobayashi, I. and Sugimori, Y., Jpn.J.Appl.Phys. 31, 2995 (1992).
5. Shimizu, M., Hayashi, K., Katayama, T. and Shiosaki, T., Proc. 8th IEEE Int.Sym. on Applications of Ferroelectrics (Greenville, SC, USA, 1992)pp.428431.

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Growth and Characterization of Ferroelectric Pb(Zr,Ti)OM3 Thin Films by Mocvd Using A 6 Inch Single Wafer Cvd System

  • Masaru Shimizu (a1), Masashi Fujimoto (a1), Takuma Katayama (a1), Tadashi Shiosaki (a1), Kenichi Nakaya (a2), Mitsuru Fukagawa (a2) and Eiki Tanikawa (a3)...

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