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Growth and Characterization Of Extremely Abrupt InGaAs

Published online by Cambridge University Press:  21 February 2011

Quantum Wells ,
C. J. Pinzone ,
E. K. Byrne ,
S. K. Sputz ,
R. People ,
J. Vandenberg  and
S. N. G. Chu
Quantum Wells
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
C. J. Pinzone
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
E. K. Byrne
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
S. K. Sputz
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
R. People
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
J. Vandenberg
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, N.J. 07974
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Abstract

Heterostructures of InGaAs/InP and InGaAs/InGaAsP were grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) in an EMCORE GS3200 system. Highly abrupt interfaces were attained with PL line widths for the InGaAs/InP system comparable to the best values reported in the literature for any crystal growth technique, MOCVD, MBE or CBE. These structures were characterized with low temperature (10K) photoluminescence (PL), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HRXD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 209
Copyright
Copyright © Materials Research Society 1994

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