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GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

Published online by Cambridge University Press:  28 February 2011

B.D. HUNT ,
N. LEWIS ,
E.L. HALL ,
L.G. JTURNER ,
L.J. SCHOWALTER ,
MASAKO OLANOTO  and
SHIN HASHIMOTO
B.D. HUNT
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
N. LEWIS
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
E.L. HALL
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
L.G. JTURNER
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
L.J. SCHOWALTER
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
MASAKO OLANOTO
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
SHIN HASHIMOTO
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301** Physics Dept., SUNY, Albany, NY 12222.
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Abstract

Thin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 151
Copyright
Copyright © Materials Research Society 1986

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