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Growth and Characterization of Epitaxial CoSi2 on Si(001)

Published online by Cambridge University Press:  28 February 2011

J.R. Jimenez ,
L.M. Hsiung ,
R.D. Thompson ,
Shin Hashimoto ,
K.V. Ramanathan ,
R. Arndt ,
K. Rajan ,
S.S. Iyer  and
L.J. Schowalter
J.R. Jimenez
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
L.M. Hsiung
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
R.D. Thompson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Shin Hashimoto
Affiliation:
Physics Department, State University of New York, Albany NY 12222
K.V. Ramanathan
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
R. Arndt
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
K. Rajan
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
S.S. Iyer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
L.J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
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Abstract

The structural and electrical properties of epitaxial CoSi2, grown on Si(001) by molecular beam epitaxy, have been investigated. Most growth conditions successful on Si(111) have been found to result in misoriented grains when applied to Si(001). However, single-orientation (001) CoSi2 films, with low resistivities (16 µΩ-cm) and low ion channeling minimum yields (χmin=5%), have been obtained by direct codeposition of Co and Si at ~500°C at Co-rich stoichiometries. Single orientation (001) CoSi2 films have also been obtained by using a template method on epitaxially grown Si buffer layers, but the resistivities of these films have not been as good. A Schottky barrier height of 0.71 eV has been measured for single-orientation CoSi2(001)/Si(001). This is significantly higher than the barrier height of 0.64 eV for CoSi2(111)/Si(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 237
Copyright
Copyright © Materials Research Society 1990

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