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Growth and Characterization of bulk GaN by Ga Vapor Transport

  • Phanikumar Konkapaka (a1), Huaqiang Wu (a1), Yuri Makarov (a2) and Michael G. Spencer (a1)

Abstract

Bulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

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[1] Nakamura, S., Mukai, T., Senoh, M., Appl. Phys. Lett. 64 (1994) 1687
[2] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Marsushita, T., Kiyoku, H., Sugimoto, Y., Jpn. J. Appl. Phys. 35 (1996) L74.
[3] Nakamura, S., J. Crystal Growth 170 (1997) 11.
[4] Johnson, M. A. L., Hughes, W. C., Rowland, W. H. Jr, Cook, J.W. Jr, Schetzina, J.F., Leonard, M., Kong, H. S., Edmond, J. A., Zawada, J., J. Crystal Growth 175/176 (1997) 72.
[5] Cheng, T. S., Hooper, S. E., Jenkins, L. C., Foxon, C. T., Lacklison, D. E., Dewship, J. D., Orton, J. W., J. Crystal Growth 166 (1996) 597.
[6] Melton, W. A., Pancove, J. I., J. Crystal Growth 178 (1997) 168.
[7] Dupuis, R. D., J. Crystal Growth 178 (1997) 56
[8] Kim, S. T., Lee, Y. J., Moon, D. C., Hong, C. H., Yoo, T. K., J. Crystal Growth 194 (1998) 37.
[9] Porowski, S., Grzegory, I., J. Crystal Growth 178 (1997) 174.
[10] Vodakov, Yu. A., Mokhov, E. N., Roenkov, A. D., Boiko, M. E., Baranov, P.G., J. Crystal Growth 183 (1998) 10.
[11] Ejder, E., J. Crystal Growth 22 (1974) 44.
[12] Elwell, D., Feigelson, R. S., Simkins, M.M., Tiller, W. A., J. Crystal Growth 66 (1984) 45.
[13] Zetterstorm, R. B., J. Mater. Sci. 5 (1970) 1102.
[14] Yamane, H., Shimada, M., Sekiguchi, T., DiSalvo, F. J., J. Crystal Growth 186 (1998) 8.
[15] Lin, Pei-Yen, Wu, YewChung Sermon, Materials Chemistry and Physics 80 (2003) 397400.
[16] Sharma, N., Thomas, P., Tricker, D., Humphreys, C., Appl. Phys. Lett. 77 (2000) 1274.
[17] Mahanty, S., Hao, M., Sugahara, T., Fareed, R. S. Q., Morishima, Y., Naoi, Y., Wang, T., Sakai, S., Mater. Lett. 41 (1999) 67.
[18] Chen, Y., Takeuchi, T., Amano, H., Akasaki, I., Yamada, N., Kaneko, Y., Wang, S. Y., Appl. Phys. Lett. 72 (1998) 710.
[19] Wu, X. H., Elsass, C. R., Abare, A., Mack, M., Keller, S., Petroff, P. M., Denbaars, S. P., Speck, J. S., Appl. Phys. Lett. 72 (1998) 692.
[20] Cho, H. K., Lee, J. Y., Yang, G. M., Kim, C. S., Appl. Phys. Lett. 79 (2001) 215
[21] Liliental-Weber, Z., Chen, Y., Ruvimov, S., Washburn, J., Phys. Rev. Lett. 79 (1997) 2835.
[22] Lin, Y. S., Ma, K.-J., Hsu, C., Feng, S. –W., Cheng, Y.–C., Liao, C.–C., Yang, C. C., Chou, C.–C., Lee, C.-M., Chyi, J.–I., Appl. Phys. Lett. 77 (2000) 2988.
[23] Munir, Z. A., Searcy, A. L., The Journal of Chemical Phys. 41 (1965) 4223.
[24] Averyanova, M. V., Przhevalskii, I. N., Karpov, S. Yu., Makarov, Yu. N., Ramm, M. S., Talalaev, R. A.. Mat. Sci. and Engg. B43 (1997) 167.
[25] Newman, N., Ross, J., and Rubin, M.., Appl. Phys. Lett. 62 1993) 11.
[26] Koleske, D. D., Wickenden, A. E., Henry, R. L., Culbertson, J. C., Twigg, M. E., J. Crystal Growth 223 (2001) 466.
[27] Koleske, D. D., Wickenden, A. E., Henry, R. L., Culbertson, J. C., Twigg, M. E., Gorman, R. J., Appl. Phys. Lett. 62 1993) 73 (1998) 2018.

Growth and Characterization of bulk GaN by Ga Vapor Transport

  • Phanikumar Konkapaka (a1), Huaqiang Wu (a1), Yuri Makarov (a2) and Michael G. Spencer (a1)

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