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Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

Published online by Cambridge University Press:  10 February 2011

T. D. Chen ,
J.-R. Lee ,
H. L. Tuller  and
Y.-M. Chiang
T. D. Chen
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
J.-R. Lee
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
H. L. Tuller
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Y.-M. Chiang
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Simplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 411: Symposium T – Electricaly-Based Microstructural Characterization , 1995 , 295
Copyright
Copyright © Materials Research Society 1996

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References

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