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Grain Boundaries of Controlled Geometry in ZnO Films Grown by Chemical Vapor Deposition: Undoped and Bi -Doped Boundaries

Published online by Cambridge University Press:  15 February 2011

I. Majid ,
Y. Liu ,
R. W. Balluffi  and
J. B. Vander Sande
I. Majid
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
Y. Liu
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
R. W. Balluffi
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
J. B. Vander Sande
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
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Abstract

We describe a chemical vapour deposition technique for the controlled growth of ZnO films, containing grain boundaries which are suitable for detailed atomic resolution studies. Using this technique, we have grown; (1) random polycrystalline, (2) highly textured polycrystalline and (3) nominally single crystal films Also, a technique for doping the grain boundaries in these specimens with Bi by an “in-diffusion” method is demonstrated. The grain boundary atomic level structure and chemistry is studied by means of High Resolution Electron Microscopy (HREM) and STEM/EDX microanalysis. Some results obtained from boundaries in textured polycrystalline films which have the c-axes in neighboring grains lined-up to ˜1 ° are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 55
Copyright
Copyright © Materials Research Society 1996

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References

1. Greuter, F. and Blatter, B., Semicond. Sci. Technol., 5, 111–137 (1990).Google Scholar
2. Kingery, W. D., Sande, J. B. Vander and Mitamura, T., J. Am. Ceram. Soc., 62, 221 (1979).Google Scholar
3. Matsuoka, M., Jpn. J. Appl. Phys., 10 [6] 736 (1971).Google Scholar
4. Ohnishi, S., Hirokawa, Y., Shiosaki, T. and Kawabata, A., Jpn. J. Appl. Phy., 17 [5], 773 (1978).Google Scholar
5. Majid, I., Liu, Y., Balluffi, R. W. and Sande, J. B. Vander, to be published.Google Scholar
6. Lee, J.-R. and Chiang, Y.-M., Solid State Ionics, 75 [1], 79 (1995).Google Scholar